? 2000 ixys all rights reserved d5 - 57 v rsm v rrm type v v 600 600 dsei 2x 101-06a symbol test conditions maximum ratings (per diode) i f(rms) t vj = t vjm 150 a i f(av)m t c = 70 c; rectangular, d = 0.5 96 a i frm t p < 10 i fsm t vj = 45 c; t = 10 ms (50 hz), sine 1200 a t = 8.3 ms (60 hz), sine 1300 a t vj = 150 c; t = 10 ms (50 hz), sine 1080 a t = 8.3 ms (60 hz), sine 1170 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 7200 a 2 s t = 8.3 ms (60 hz), sine 7100 a 2 s t vj = 150 c; t = 10 ms (50 hz), sine 5800 a 2 s t = 8.3 ms (60 hz), sine 5700 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+150 c p tot t c = 25 c 250 w v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 cv r = v rrm 3ma t vj = 25 cv r = 0.8 v rrm 1ma t vj = 125 cv r = 0.8 v rrm 20 ma v f i f = 100 a; t vj = 150 c 1.17 v t vj =25 c 1.25 v v t0 for power-loss calculations only 0.70 v r t 4.7 m ? r thjc 0.5 k/w r thch 0.05 k/w t rr i f = 1 a; -di/dt = 400 a/s; v r = 30 v; t vj = 25 c 35 50 ns i rm v r = 100 v; i f = 80 a; -di f /dt = 200 a/s 19 24 a l c dsei 2x 101 v rrm = 600 v i favm = 2x 96 a t rr = 35 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ matched diodes f. parallel operation planar passivated chips two independent diodes very short recovery time extremely low switching losses low i rm -values soft recovery behaviour fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 031 m4 screws (4x) supplied minibloc, sot-227 b dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08
? 2000 ixys all rights reserved d5 - 58 dsei 2x 101, 600v 200 600 1000 0 400 800 120 140 160 180 200 220 240 260 0.001 0.01 0.1 1 10 0.1 1 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 10 30 50 0 20 40 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v fr di f /dt v 200 600 1000 0 400 800 10 30 50 70 0 20 40 60 80 100 1000 0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 0 25 50 75 100 125 150 i rm q r i f a v f -di f /dt -di f /dt a/ s a v s a/ s t rr ns t fr z thjc a/ s c v r = 300v t vj = 100 c i f = 100a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj =100 c t vj =25 c t vj =150 c t vj = 100 c v r = 300v t vj = 100 c v r = 300v i f =200a i f =100a i f = 50a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f =200a i f =100a i f = 50a t fr v fr fig. 7 transient thermal impedance junction to case at various duty cycles constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.02 0.00002 2 0.05 0.00081 3 0.076 0.01 4 0.24 0.94 5 0.114 0.45
? 2000 ixys all rights reserved d5 - 59 v rsm v rrm type v v 1200 1200 dsei 2x 101-12a symbol test conditions maximum ratings (per diode) i f(rms) t vj = t vjm 130 a i f(av)m t c = 50 c; rectangular, d = 0.5 91 a i frm t p < 10 i fsm t vj = 45 c; t = 10 ms (50 hz), sine 900 a t = 8.3 ms (60 hz), sine 970 a t vj = 150 c; t = 10 ms (50 hz), sine 810 a t = 8.3 ms (60 hz), sine 870 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 4100 a 2 s t = 8.3 ms (60 hz), sine 4000 a 2 s t vj = 150 c; t = 10 ms (50 hz), sine 3300 a 2 s t = 8.3 ms (60 hz), sine 3200 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+150 c p tot t c = 25 c 250 w v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 cv r = v rrm 3ma t vj = 25 cv r = 0.8 v rrm 1.5 ma t vj = 125 cv r = 0.8 v rrm 15 ma v f i f = 100 a; t vj = 150 c 1.61 v t vj =25 c 1.87 v v t0 for power-loss calculations only 1.01 v r t 6.1 m ? r thjc 0.5 k/w r thch 0.05 k/w t rr i f = 1 a; -di/dt = 400 a/s; v r = 30 v; t vj = 25 c 40 60 ns i rm v r = 100 v; i f = 75 a; -di f /dt = 200 a/s 24 30 a l c dsei 2x 101 v rrm = 1200 v i favm = 2x 91 a t rr = 40 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ matched diodes f. parallel operation planar passivated chips two independent diodes very short recovery time extremely low switching losses low i rm -values soft recovery behaviour fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 m4 screws (4x) supplied minibloc, sot-227 b dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 008
? 2000 ixys all rights reserved d5 - 60 200 600 1000 0 400 800 200 250 300 350 400 450 500 0.001 0.01 0.1 1 10 0.1 1 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 10 30 50 0 20 40 60 0.0 0.5 1.0 1.5 v fr di f /dt v 200 600 1000 0 400 800 20 60 100 140 0 40 80 120 100 1000 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 150 i rm q r i f a v f -di f /dt -di f /dt a/ s a v s a/ s t rr ns t fr z thjc a/ s c v r = 600v t vj = 100 c i f = 100a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj =100 c t vj =150 c t vj = 100 c v r = 600v t vj = 100 c v r =600v i f =200a i f =100a i f = 50a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f =200a i f =100a i f = 50a t fr v fr fig. 7 transient thermal impedance junction to case at various duty cycles constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.02 0.00002 2 0.05 0.00081 3 0.076 0.01 4 0.24 0.94 5 0.114 0.45 t vj = 25 c dsei 2x 101, 1200v
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